Ion Beam Assisted Film Growth ( Volume 3 )

Publication series :Volume 3

Author: Itoh   T.  

Publisher: Elsevier Science‎

Publication year: 2012

E-ISBN: 9780444599087

P-ISBN(Paperback): 9780444872807

P-ISBN(Hardback):  9780444872807

Subject: O48 solid physics

Language: ENG

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Description

This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams.

Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.

Chapter

Front Cover

pp.:  1 – 4

Copyright Page

pp.:  5 – 8

Table of Contents

pp.:  8 – 20

Chapter 1. Overview

pp.:  20 – 28

Chapter 2. Film Growth by Ion Beam and Plasma Discharge Sputtering Method

pp.:  28 – 52

Chapter 3. Preparation and Characterization of II-VI Semiconductor Films by Sputtering

pp.:  52 – 78

Chapter 4. Sputtering Yield

pp.:  78 – 120

Chapter 5. Low Energy Ion/Surface Interaction During Film Growth from the Vapor Phase

pp.:  120 – 172

Chapter 6. Ion Beam Mixing

pp.:  172 – 242

Chapter 7A. Partially Ionized Molecular Beam Epitaxy

pp.:  242 – 272

Chapter 7B. Ionized Cluster Beam Deposition

pp.:  272 – 308

Chapter 8. Direct Ion Beam Deposition

pp.:  308 – 338

Chapter 9. Film Growth by Utilizing Ionized Carbon Beam

pp.:  338 – 362

Chapter 10. Molecular Beam Epitaxy of III-V Compound Semiconductor Using Mass Separated Low Energy Ion Beam

pp.:  362 – 398

Chapter 11. Ion Beam Synthesis of Films

pp.:  398 – 444

Subject Index

pp.:  444 – 454

Material Index

pp.:  454 – 459

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