Chapter
Chapter 2. Insitu spectral ellipsometry for real-time measurement and control
pp.：
23 – 31
Chapter 3. In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs
pp.：
31 – 36
Chapter 4. Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures
pp.：
36 – 41
Chapter 5. In situ studies of semiconductor processes by spectroellipsometry
pp.：
41 – 49
Chapter 6. Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering
pp.：
49 – 54
Chapter 7. Criteria for the extraction of SIMOX material parameters from spectroscopic ellipsometry data
pp.：
54 – 59
Chapter 8. Round robin investigation of silicon oxide on silicon reference materials for ellipsometry
pp.：
59 – 66
Chapter 9. Spectroscopic ellipsometric characterization of Si/Si1-xGex strained-layer supperlattices
pp.：
66 – 71
Chapter 10. The influence of nanocrystals on the dielectric function of porous silicon
pp.：
71 – 76
Chapter 11. Some examples of depth resolution in SIMS analysis
pp.：
76 – 84
Chapter 12. Process control for III-V semiconductor device fabrication using mass spectroscopy
pp.：
84 – 89
Chapter 13. Sputter induced resonant ionization spectroscopy for trace analysis in silicon
pp.：
89 – 93
Chapter 14. Contamination control and ultrasensitive chemical analysis
pp.：
93 – 102
Chapter 15. Organic contamination of silicon wafers by buffered oxide etching
pp.：
102 – 107
Chapter 16. Application of advanced contamination analysis for qualification of wafer handling systems and chucks
pp.：
107 – 113
Chapter 17. In situ optical spectroscopy of surfaces and interfaces with submonolayer resolution
pp.：
113 – 120
Chapter 18. Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy
pp.：
120 – 125
Chapter 19. Optical second harmonic generation from the Si(111)–Sb interface
pp.：
125 – 129
Chapter 20. Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride
pp.：
129 – 133
Chapter 21. On the assessment of local stress distributions in integrated circuits
pp.：
133 – 140
Chapter 22. Strain analysis of multilayered silicon-based contact structures
pp.：
140 – 145
Chapter 23. In-process control of silicide formation during rapid thermal processing
pp.：
145 – 149
Chapter 24. In situ ellipsometry for real-time feedback control of oxidation furnaces
pp.：
149 – 157
Chapter 25. Optical characterization of the electrical properties of processed GaAs
pp.：
157 – 167
Chapter 26. Optical study of band bending and interface recombination at Sb, S and Se covered gallium arsenide surfaces
pp.：
167 – 172
Chapter 27. Photoreflectance investigation of dry-etch-induced damage in semi-insulating GaAs substrates
pp.：
172 – 177
Chapter 28. Contactless electromodulation for in situ characterization of semiconductor processing
pp.：
177 – 181
Chapter 29. Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's
pp.：
181 – 186
Chapter 30. Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
pp.：
186 – 191
Chapter 31. Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures
pp.：
191 – 196
Chapter 32. Characterization of lattice-matched and strained GalnAs/AlInAs HEMT structures by photoluminescence spectroscopy
pp.：
196 – 201
Chapter 33. Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
pp.：
201 – 205
Chapter 34. Electric field dependence of allowed and forbidden transitions in In0.53Ga0.47As/In0.52 Al0.48 As single quantum wells by room temperature modulation spectroscopy
pp.：
205 – 211
Chapter 35. Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
pp.：
211 – 216
Chapter 36. Temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures
pp.：
216 – 222
Chapter 37. Lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC
pp.：
222 – 227
Chapter 38. Mapping of the local minority carrier diffusion length in silicon wafers
pp.：
227 – 232
Chapter 39. Evaluation of the minority carrier lifetime and diffusion coefficient of cast polycrystalline silicon wafers by the dual mercury probe method
pp.：
232 – 236
Chapter 40. In-situ quality monitoring during the deposition of a-Si:H films
pp.：
236 – 241
Chapter 41. Non-destructive identification of end-of-range damage in ion-implanted and annealed silicon
pp.：
241 – 246
Chapter 42. Correlation of photoluminescence and nuclear characterization of In-implanted silicon
pp.：
246 – 250
Chapter 43. Accurate infrared spectroscopy analysis in back-side damaged silicon wafers
pp.：
250 – 254
Chapter 44. Chemical composition of porous silicon layers studied by IR spectroscopy
pp.：
254 – 259
Chapter 45. Stoichiometry of oxygen precipitates in silicon
pp.：
259 – 263
Chapter 46. Optical characterization of semiconductors containing inhomogeneous layers
pp.：
263 – 269
Chapter 47. Nonlinear recombinations in photoreflectance characterization of silicon wafers
pp.：
269 – 274
Chapter 48. Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement
pp.：
274 – 280
Chapter 49. Epioptic analysis of the initial ordered growth of Au on Si(111)
pp.：
280 – 283
Chapter 50. Diagnostics of the silicon–insulator interface structure by optical second-harmonic generation
pp.：
283 – 287
Chapter 51. Atomic scale simulation of crystal growth applied to the calculation of the photoemission current
pp.：
287 – 291
Chapter 52. Potential step imaging of interfaces in MBE-grown structures
pp.：
291 – 295
Chapter 53. Using the metal-oxide–polysilicon–silicon (MOPS) structure to determine LPCVD polysilicon quality
pp.：
295 – 299
Chapter 54. Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's
pp.：
299 – 305
Chapter 55. Effect of near-surface damage on C–V measurements of Schottky barrier diodes
pp.：
305 – 309
Chapter 56. The impact of high-field stressing on C–V characteristics of irradiated gate oxides
pp.：
309 – 315
Chapter 57. Effects of diffusion-induced defects on the carrier lifetime
pp.：
315 – 320
Chapter 58. In situ bulk lifetime measurement on silicon with a chemically passivated surface
pp.：
320 – 326
Chapter 59. Infrared analysis of buried insulator layers formed by ion implantation into silicon
pp.：
326 – 330
Chapter 60. Electrochemical etching and profiling of silicon
pp.：
330 – 336
Author index
pp.：
336 – 341
Subject index
pp.：
341 – 353
Semiconductor Materials Analysis and Fabrication Process Control
( Volume 34 )
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