Description
The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.
Chapter
Chapter 3. Photoluminescence of confined excitons in MBE-grown Si1-x Gex/Si(100) single quantum wells
pp.：
19 – 24
Chapter 4. Magnetotransport studies of remote doped Si/Si1-x Gex heterostructures grown on relaxed SiGe buffer layers
pp.：
24 – 29
Chapter 5. Electron intersubband absorption in modulation and well-doped Si/Si1-x Gex multiple quantum wells
pp.：
29 – 33
Chapter 6. Hole transport in Si0.8 Ge0.2 quantum wells at low temperatures
pp.：
33 – 36
Chapter 7. Band gap luminescence in pseudomorphic Si1-x Gex quantum wells grown by molecular beam epitaxy
pp.：
36 – 39
Chapter 8. The deposition of Si-Ge strained layers from GeH4, SiH2Cl2, SiH4 and Si2H6
pp.：
39 – 43
Chapter 9. Chemical vapour deposition of epitaxial SiGe thin films from SiH4–GeH4–HCl–H2 gas mixtures in an atmospheric pressure process
pp.：
43 – 47
Chapter 10. Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition
pp.：
47 – 51
Chapter 11. A comparative study of heavy boron doping in silicon and Si1-x Gex layers grown by molecular beam epitaxy
pp.：
51 – 55
Chapter 12. Photoluminescence and X-ray diffraction study of highly uniform silicon and GexSi1-x epitaxial layers
pp.：
55 – 61
Chapter 13. Low temperature silicon and Si1-x Gex epitaxy by rapid thermal chemical vapour deposition using hydrides
pp.：
61 – 66
Chapter 14. Crystallization of amorphous GexSi1-x films on SiO2
pp.：
66 – 69
Chapter 15. Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition
pp.：
69 – 78
Chapter 16. Characterization of SiGe multiple quantum wells by spectroscopic ellipsometry and photoluminescence
pp.：
78 – 82
Chapter 17. SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry
pp.：
82 – 87
Chapter 18. Evolution of surface morphology and strain during SiGe epitaxy
pp.：
87 – 94
Chapter 19. Photoreflectance study of strained (001) Si1-x Gex/Si layers
pp.：
94 – 98
Chapter 20. Band edge and deep level photoluminescence of fully strained Si1-x Gex/Si alloys
pp.：
98 – 103
Chapter 21. Observation of electroluminescence from pseudomorphic Si1-x Gex alloy layers
pp.：
103 – 107
Chapter 22. Atomistic processes of surface segregation during Si-Ge MBE growth
pp.：
107 – 113
Chapter 23. Germanium segregation induced reconstruction of SiGe layers deposited on Si(100)
pp.：
113 – 117
Chapter 24. Temperature-dependent growth anisotropy observed on Si(001) surfaces during silicon gas source molecular beam epitaxy using disilane
pp.：
117 – 121
Chapter 25. Effect of a surfactant on the growth of Si/Ge heterostructures
pp.：
121 – 125
Chapter 26. The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE
pp.：
125 – 129
Chapter 27. Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1-x/Si
pp.：
129 – 135
Chapter 28. Low-temperature in situ cleaning of silicon wafers with an ultra high vacuum compatible plasma source
pp.：
135 – 141
Chapter 29. Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I – V characteristics
pp.：
141 – 146
Chapter 30. 50 GHz Si1-x Gex heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy
pp.：
146 – 150
Chapter 31. A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation
pp.：
150 – 154
Chapter 32. UV-assisted oxidation of SiGe strained layers
pp.：
154 – 159
Chapter 33. Boron-doped Si/Ge superlattices and heterostructures
pp.：
159 – 163
Chapter 34. Electrical characterization of Si–Ge heterostructure bipolar transistors
pp.：
163 – 166
Chapter 35. Strain relaxation in epitaxial Si1-x Gex/Si(100) layers induced by reaction with palladium
pp.：
166 – 170
Chapter 36. The energy of systems of misfit dislocations in epitaxial strained layers
pp.：
170 – 175
Chapter 37. 1 MeV electron irradiation induced degradation of boron-doped strained Si1-x Gex layers
pp.：
175 – 182
Chapter 38. Deep level transient spectroscopy study of defects in megaelectronvolt germanium ion implanted silicon
pp.：
182 – 185
Chapter 39. Crystallization kinetics of boron- and germanium-implanted <100> Si: a balance between doping and strain effects
pp.：
185 – 189
Chapter 40. Stress in Si1-x Gex films prepared by ion beam sputtering: origin and relaxation
pp.：
189 – 193
Chapter 41. Elastic strain energy of graded Si1-x Gex buffer layers
pp.：
193 – 198
Chapter 42. Experimental study of Si–Ge tetrahedral solid solution in Ni–Co–Mg talcs
pp.：
198 – 205
Chapter 43. Electroluminescent performance of porous silicon
pp.：
205 – 209
Chapter 44. Bright visible photoluminescence in thin silicon films
pp.：
209 – 214
Chapter 45. Quantitative theory of optical properties of Si–Ge heterostructures
pp.：
214 – 218
Chapter 46. Electronic properties of strained Si/Ge superlattices: tight binding approach
pp.：
218 – 221
Chapter 47. Si/Ge superlattice embedded in silicon and germanium: electronic structure and transition probabilities
pp.：
221 – 224
Chapter 48. Buffer concepts of ultrathin Sim Gen superlattices
pp.：
224 – 230
Chapter 49. Characterization of short-period Sim Gen superlattices by high-resolution transmission electron microscopy and X-ray diffraction
pp.：
230 – 236
Chapter 50. Photoluminescence studies of Si/Si1-x Gex quantum wells and Sim Gen superlattices
pp.：
236 – 243
Chapter 51. Photoluminescence from short-period strained-layer superlattices of (Si6Ge4)p after hydrogen passivation
pp.：
243 – 246
Chapter 52. Optical and electrical characterization of Si/Ge superlattices
pp.：
246 – 252
Chapter 53. Band-to-band transitions in strain-symmetrized, short-period Si/Ge superlattices
pp.：
252 – 255
Chapter 54. Optical transitions in strained Ge/Si superlattices
pp.：
255 – 260
Chapter 55. In-plane and vertical high frequency conductivity in Si/Ge short-period superlattices
pp.：
260 – 263
Chapter 56. Differential optical absorption spectroscopy and X-ray characterization of symmetrically strained Ge–Si superlattices
pp.：
263 – 268
Chapter 57. Ambient pressure scanning tunneling microscope imaging of hydrogen-passivated Si/Ge multilayers
pp.：
268 – 274
Chapter 58. Photocapacitance studies of short-period Si/Ge superlattices
pp.：
274 – 278
Chapter 59. In-plane Raman scattering of [001]-grown Si/Ge superlattices
pp.：
278 – 283
Author Index of Volume 222
pp.：
283 – 285
Subject Index of Volume 222
pp.：
285 – 290
SiGe Based Technologies
( Volume 31 )
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