Chapter
Chapter 2. Optical bestability in II–VI compounds
pp.：
24 – 34
Chapter 3. Optical studies of donors and acceptors in cubic SiC
pp.：
34 – 40
Chapter 4. Electron spin resonance studies of transition metal deep level impurities in SiC
pp.：
40 – 44
Chapter 5. Characterization of 3C-SiC epilayers by pulsed electron spin resonance
pp.：
44 – 48
Chapter 6. Electron paramagnetic resonance study of new centres in SiC
pp.：
48 – 52
Chapter 7. Measurement of electro-optical properties of β-SiC on sapphir esubstrates and free-standing films
pp.：
52 – 56
Chapter 8. Interdiffusion in amorphous Si/SiC multilayers
pp.：
56 – 60
Chapter 9. Optical absorption coefficients in a-Si1–x Cx:H
pp.：
60 – 64
Chapter 10. Short-range order in hydrogenated amorphous Si–C alloys studied by extended X-ray absorption fine structure
pp.：
64 – 68
Chapter 11. A computational study into the origin of SiC polytypes
pp.：
68 – 74
Chapter 12. Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates
pp.：
74 – 80
Chapter 13. Influence of deposition parameters on the properties of SiC films
pp.：
80 – 82
Chapter 14. Influence of surface energy on the growth of 6H-and 4H-SiC polytypes by sublimation
pp.：
82 – 86
Chapter 15. Stress modification and characterization of thin SiC films grown byplasma-enhanced chemical vapour deposition
pp.：
86 – 92
Chapter 16. Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon
pp.：
92 – 96
Chapter 17. Growth and properties of CVD–SiC layers using tetramethylsilane
pp.：
96 – 102
Chapter 18. SiC and TaC as optical materials
pp.：
102 – 106
Chapter 19. Growth of SiC on silicon in a low pressure vertical reactor
pp.：
106 – 110
Chapter 20. Electronic structure of laser-synthesized SiC by photoelectron and soft X-ray spectroscopy
pp.：
110 – 116
Chapter 21. SiC bipolar devices
pp.：
116 – 126
Chapter 22. Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system
pp.：
126 – 130
Chapter 23. Applications of SiC thin films in low temperature devices
pp.：
130 – 134
Chapter 24. α-SiC buried-gate junction field effect transistors
pp.：
134 – 138
Chapter 25. Chemical vapor deposition of β -SiC on silicon-on-sapphire and silicon-on-insulator substrates
pp.：
138 – 144
Chapter 26. Characterization studies of low pressure chemical vapour deposition SICARB layers for wide band gap emitters
pp.：
144 – 152
Chapter 27. Electron channelling radiation: first steps towards a bright and tunable X-ray source
pp.：
152 – 162
Chapter 28. Prospects for new applications of diamond produced by stable andmetastable synthesis
pp.：
162 – 172
Chapter 29. Hard-photon emission and shower formation when multigiga-electronvolt electrons penetrate single crystals near axial directions: strong-field effects
pp.：
172 – 180
Chapter 30. Applications exploiting the extreme properties of diamonds
pp.：
180 – 186
Chapter 31. Polycrystalline diamond for optical thin films
pp.：
186 – 192
Chapter 32. High energy ion implantation into diamond and cubic boron nitride
pp.：
192 – 204
Chapter 33. Limits to diamond and diamond-like material properties produced under metastable conditions
pp.：
204 – 210
Chapter 34. Limits to quality and size of diamond and cubic boron nitrid esynthesized under high pressure, high temperature conditions
pp.：
210 – 220
Chapter 35. Megaelectronvolt ion irradiation effects in amorphous carbon: the roles of the C—C and C—C bonds
pp.：
220 – 224
Chapter 36. Theoretical status of diamond and its defects, excited state sand atomic motion
pp.：
224 – 232
Chapter 37. Materials modification: doping of diamond by ion implantation
pp.：
232 – 240
Chapter 38. The fate of implanted 19F ions in diamond and their theoretical modelling
pp.：
240 – 248
Chapter 39. Diamond and diamond simulants as studied by micro-Raman spectroscopy
pp.：
248 – 256
Chapter 40. Electron and nuclear structural characterization of natural, synthetic, homoepitaxial and polycrystalline low pressure chemically vapour-deposited diamond
pp.：
256 – 262
Chapter 41. Ion beam studies of the static and dynamic properties of dopants in diamond
pp.：
262 – 270
Chapter 42. Diamond electronic devices—can they outperform silicon or GaAs?
pp.：
270 – 278
Chapter 43. Theory of native defects, doping and diffusion in diamond and silicon carbide
pp.：
278 – 286
Chapter 44. p -Type semiconducting structures in diamond implanted with boron ions
pp.：
286 – 292
Chapter 45. Metallurgical study of SiC-NiCr plasma-sprayed coatings
pp.：
292 – 298
Chapter 46. One-electron states induced by 3d transition metal impurities in diamond
pp.：
298 – 302
Chapter 47. Plasma-enhanced chemical vapour deposition of SiC layers using a liquid source
pp.：
302 – 308
Chapter 48. Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics
pp.：
308 – 312
Chapter 49. On the fracture statistics of polycrystalline a-SiC at room and high temperature
pp.：
312 – 316
Chapter 50. Electronic properties of disordered SiC materials
pp.：
316 – 320
Chapter 51. Temperature dependence of the electric field gradient parameters at 19F lattice sites in semiconducting and insulating diamonds
pp.：
320 – 326
Chapter 52. Influence of silicon on the physical properties of diamond-like films
pp.：
326 – 330
Chapter 53. Epitaxially grown β-SiC on Si(100) and Si(111) substrates by low pressure chemical vapour deposition
pp.：
330 – 334
Chapter 54. Diamond-like carbon films deposited in a dual microwave–radio-frequency plasma
pp.：
334 – 338
Chapter 55. Transmission electron microscopy studies of dislocation mechanisms in as-sintered α-SiC and after creep experiments at high temperature
pp.：
338 – 350
Chapter 56. Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite
pp.：
350 – 354
Chapter 57. The 2.526 eV luminescence band in diamond
pp.：
354 – 360
Chapter 58. Study of the growth mechanisms of amorphous carbon films by isotopic tracing methods
pp.：
360 – 366
Chapter 59. Thermal conductivity measurements of synthetic diamond films using the photothermal beam deflection technique
pp.：
366 – 368
Chapter 60. Raman spectra and electrical conductivity of glassy carbon
pp.：
368 – 372
Chapter 61. Nitrogen-containing defects in diamond: experimental data and molecular orbital linear-combination-of-atomic-orbitals
pp.：
372 – 376
Chapter 62. Scanning tunnelling microscopy studies of diamond-like films prepared by laser ablation
pp.：
376 – 382
Chapter 63. Picosecond optical measurements of the properties of heavily carbon-implanted silicon
pp.：
382 – 386
Author Index
pp.：
386 – 388
Subject Index
pp.：
388 – 393
SiC, Natural and Synthetic Diamond and Related Materials
( Volume 20 )
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