Selected Topics in Group IV and II-VI Semiconductors ( Volume 54 )

Publication series ：Volume 54

Author： Parker E. H. C.;Rudolph Peter;Müller-Vogt G.

Publisher： Elsevier Science‎

Publication year： 2012

E-ISBN: 9780444596437

P-ISBN(Paperback): 9780444824110

P-ISBN(Hardback): 9780444824110

Subject： TB3 Engineering Materials

Language： ENG

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Description

This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.

Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

Chapter

Front Cover

pp.： 1 – 4

Selected Topics in Group IV and II–VI Semiconductors

pp.： 4 – 5

pp.： 5 – 10

Table of Contents

pp.： 10 – 11

Preface

pp.： 11 – 16

SECTION I: OPTICAL PROPERTIES

pp.： 16 – 60

SECTION II: SUPERLATTICES

pp.： 60 – 76

SECTION III: MATERIAL ANALYSIS

pp.： 76 – 128

SECTION IV. STRAIN ADJUSTMENT

pp.： 128 – 162

SECTION V. COMPETING TECHNOLOGIES

pp.： 162 – 210

SECTION VI. DEVICES

pp.： 210 – 263

SECTION VII. NANOMETER STRUCTURES

pp.： 263 – 300

SECTION VIII: GROWTH AND EQUIPMENT

pp.： 300 – 368

SECTION IX: TWO-DIMENSIONAL CARRIERS

pp.： 368 – 401

SECTION X: NOVEL MATERIALS

pp.： 401 – 457

Author index

pp.： 457 – 464

Subject index

pp.： 464 – 466

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