III-V Semiconductor Materials and Devices ( Volume 7 )

Publication series :Volume 7

Author: Malik   R. J.  

Publisher: Elsevier Science‎

Publication year: 2012

E-ISBN: 9780444596352

P-ISBN(Paperback): 9780444870742

P-ISBN(Hardback):  9780444870742

Subject: TN304.2 compound semiconductor

Language: ENG

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Description

The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.

Chapter

Front Cover

pp.:  1 – 4

Copyright Page

pp.:  5 – 12

Introduction to the Series

pp.:  6 – 7

Preface to Volume 7

pp.:  8 – 13

Table of Contents

pp.:  12 – 6

ADVISORY BOARD

pp.:  13 – 14

CHAPTER 2. LIQUID PHASE EPITAXIAL GROWTH

pp.:  86 – 124

CHAPTER 3. VAPOR PHASE EPITAXY OF III– V SEMICONDUCTORS

pp.:  124 – 160

CHAPTER 4. METALORGANIC CHEMICAL VAPOR DEPOSITION OF III -V SEMICONDUCTORS

pp.:  160 – 230

CHAPTER 5. MOLECULAR BEAM EPITAXY

pp.:  230 – 344

CHAPTER 6. ION IMPLANTATION IN III-V SEMICONDUCTORS

pp.:  344 – 442

CHAPTER 7. CHARACTERIZATION OF III-V SEMICONDUCTORS

pp.:  442 – 508

CHAPTER 8. III-V SEMICONDUCTOR DEVICES

pp.:  508 – 734

SUBJECT INDEX

pp.:  734 – 741

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