Characterization of Semiconductor Heterostructures and Nanostructures ( 2 )

Publication series :2

Author: Agostini   Giovanni;Lamberti   Carlo  

Publisher: Elsevier Science‎

Publication year: 2013

E-ISBN: 9780444595492

P-ISBN(Paperback): 9780444595515

P-ISBN(Hardback):  9780444595515

Subject: O413 quantum theory;O6-0 chemical principle and method;TN43 The semiconductor integrated circuit (ssc)

Language: ENG

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Description

Characterization of Semiconductor Heterostructures and Nanostructures” is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling.

The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. 

The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology.

  • Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostru

Chapter

Front Cover

pp.:  1 – 4

Copyright

pp.:  5 – 6

Dedication

pp.:  6 – 8

Contents

pp.:  8 – 10

Preface

pp.:  10 – 12

Contributors

pp.:  12 – 16

Chapter 3 - Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-ray Diffraction

pp.:  90 – 128

Chapter 4 - Nanostructures Observed by Surface Sensitive X-Ray Scattering and Highly Focused Beams

pp.:  128 – 190

Chapter 5 - Small-Angle X-ray Scattering for the Study of Nanostructures and Nanostructured Materials

pp.:  190 – 244

Chapter 6 - Local Structure of Bulk and Nanocrystalline Semiconductors Using Total Scattering Methods

pp.:  244 – 274

Chapter 7 - X-Ray Absorption Fine Structure in the Study of Semiconductor Heterostructures and Nanostructures

pp.:  274 – 326

Chapter 8 - Grazing Incidence Diffraction Anomalous Fine Structure in the Study of Structural Properties of Nanostructures

pp.:  326 – 376

Chapter 9 - Micro- and Nano-X-ray Beams

pp.:  376 – 428

Chapter 10 - Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures

pp.:  428 – 482

Chapter 11 - Imaging at the Nanoscale: Scanning Probe Microscopies Applied to Semiconductors

pp.:  482 – 524

Chapter 12 - Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells

pp.:  524 – 572

Chapter 13 - Cathodoluminescence of Self-assembled Nanosystems: The Cases of Tetrapods, Nanowires, and Nanocrystals

pp.:  572 – 618

Chapter 14 - The Role of Photoemission Spectroscopies in Heterojunction Research

pp.:  618 – 656

Chapter 15 - Electrical and Electro-Optical Characterization of Semiconductor Nanowires

pp.:  656 – 700

Chapter 16 - Electron Spin Resonance of Interfaces and Nanolayers in Semiconductor Heterostructures

pp.:  700 – 768

Chapter 17 - Raman Spectroscopy

pp.:  768 – 818

Index

pp.:  818 – 830

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