Laser and Electron Beam Processing of Materials

Author: White   C. W.  

Publisher: Elsevier Science‎

Publication year: 2012

E-ISBN: 9780323142533

P-ISBN(Paperback): 9780127468501

P-ISBN(Hardback):  9780127468501

Subject:

Language: ENG

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Description

Laser and Electron Beam Processing of Materials contains the papers presented at the symposium on "Laser and Electron Beam Processing of Materials," held in Cambridge, Massachusetts, in November 1979, sponsored by the Materials Research Society.

The compilation presents reports and research papers on the use of directed energy sources, such as lasers and electron beams for materials processing. The majority of the materials presented emphasize results on semiconductor materials research. Substantial findings on research on metals, alloys, and other materials are presented as well. Topics covered by the papers include the use of scanned cw sources (both photons and electrons) to recrystallize amorphous layers, enhanced substitutional solubility, solute trapping, zone refining of impurities, and constitutional supercooling. The use of lasers and electron beams to anneal ion implant damage and contacts formation, processing of ion-implanted metals, and surface alloying of films deposited on metallic surfaces are also discussed.

Metallurgists, engineers, and materials scientists will find the book very insightful.

Chapter

Front Cover

pp.:  1 – 4

Copyright Page

pp.:  5 – 6

Table of Contents

pp.:  6 – 16

PREFACE

pp.:  16 – 18

ACKNOWLEDGMENTS

pp.:  18 – 20

PART I: Fundamental Mechanisms

pp.:  25 – 108

PART II: Enhanced Solubilities, Solute Trapping, and Zone Refining

pp.:  108 – 168

PART III: Ultrarapid Heating and Cooling

pp.:  168 – 187

PART IV: Annealing and Recrystallization

pp.:  187 – 260

PART V: Elemental Semiconductors

pp.:  260 – 328

PART VI: Compound Semiconductors

pp.:  328 – 404

PART VII: Defects

pp.:  404 – 486

PART VIII: Ohmic Contacts

pp.:  486 – 530

PART IX: Metal-Silicon Interactions

pp.:  530 – 568

PART X: Deposited Layers

pp.:  568 – 612

PART XI: Device Applications

pp.:  612 – 710

PART XII: Metals and Other Materials

pp.:  710 – 786

INDEX OF CONTRIBUTORS

pp.:  786 – 789

The users who browse this book also browse