Organometallic Vapor-Phase Epitaxy
：Theory and Practice
Publication subTitle ：Theory and Practice
Author： Stringfellow Gerald B.
Publisher： Elsevier Science
Publication year： 2012
E-ISBN: 9780323139175
P-ISBN(Paperback): 9780126738407
P-ISBN(Hardback): 9780126738407
Subject： O47 semiconductor physics
Language： ENG
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Description
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
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