Chapter
Chapter 3. Hydrogen in silicon: state, reactivity and evolution after ion implantation
pp.：
32 – 38
Chapter 4. Pairing of acceptors with interstitial donors in silicon and germanium
pp.：
38 – 44
Chapter 5. Hydrogen passivation and thermal reactivation of zinc double acceptors in silicon
pp.：
44 – 48
Capter 6. A Hydrogen-Carbo n Relate d Deep Donor in Crystalline n-Si:C
pp.：
48 – 54
Chapter 7. Radiative recombination channels due to hydrogen in crystalline silicon
pp.：
54 – 60
Chapter 8. Defects created by hydrogen implantation into silicon
pp.：
60 – 64
Chapter 9. Hydrogenation of shallow and deep levels in silicon
pp.：
64 – 70
Chapter 10. Hydrogen-related vibrations in crystalline silicon
pp.：
70 – 76
Chapter 11. Transition metals in silicon and their gettering behaviour
pp.：
76 – 84
Chapter 12. Donor formation in silicon owing to ion implantation of the rare earth metal erbium
pp.：
84 – 88
Chapter 13. 1.54 μm photoluminescence of erbium-implanted
silicon
pp.：
88 – 92
Chapter 14. Fast-diffusing defects induced by copper in silicon
pp.：
92 – 96
Chapter 15. Quenched-in, fast-diffusing defects in silicon studied by the perturbed angular correlation
method
pp.：
96 – 100
Chapter 16. Recent developments in ion implantation in silicon
pp.：
100 – 108
Chapter 17. A study of carbon-implanted silicon for light-emittin g diode fabrication
pp.：
108 – 114
Chapter 18. Role of point defects in the transient diffusion and clustering of implanted boron in silicon
pp.：
114 – 120
Chapter 19. The effect of phosphorus background concentration on the diffusion of tin , arsenic and antimony in silicon
pp.：
120 – 126
Chapter 20. Heavy metal contamination during integrated-circuit processing : measurements of contamination level and internal gettering efficiency by surface photovoltage
pp.：
126 – 136
Chapter 21. Electronic behaviour of decorated stacking faults in silicon
pp.：
136 – 142
Chapter 22. Activation and gettering of intrinsic metallic impurities during rapid thermal processing
pp.：
142 – 146
Chapter 23. Gold diffusion in silicon: enhanced substitutional gold formation by rhodium doping
pp.：
146 – 152
Chapter 24. Effect of deformation-induced defects on the Fermi level position at recombination centers in n-Si
pp.：
152 – 156
Chapter 25. Precipitation at grain boundaries in silicon
pp.：
156 – 160
Chapter 26. Effects of deuterium plasma treatments on the electrical properties of boron-doped silicon
pp.：
160 – 166
Chapter 27. Modelling of recombination activity and passivation by hydrogen of dislocations in silicon wafers
pp.：
166 – 170
Chapter 28. Formation of buried CoSi 2 layers by ion implantation, studied by Mossbauer spectroscopy and Rutherford backscattering spectroscopy
pp.：
170 – 176
Chapter 29. Hall effect spectroscopy of thermal donors in silicon films synthesized by oxygen implantation
pp.：
176 – 182
Chapter 30. Perturbed angular correlation spectroscopy of acceptor-donor pairs in silicon, germanium and
GaAs
pp.：
182 – 186
Chapter 31. Optical absorption by platinum in crystallin silicon
pp.：
186 – 192
Chapter 32. Surface characterization of high-dose Sb + implanted rapid thermal annealed monocrystalline
silicon
pp.：
192 – 198
Chapter 33. Chromium diffusivity in boron-doped silicon: reassessmen to f the activation energy from low tempera ture
measurements
pp.：
198 – 202
Chapter 34. Regrowth of indium-implanted (100), (110 ) and (111) silicon crystals studied with Rutherford backscattering and perturbed
angular correlation techniques
pp.：
202 – 210
Chapter 35. Substrate-damage-free laser recrystallization of polycrystalline silicon
pp.：
210 – 214
Chapter 36. A photoluminescence study of zinc-implanted silicon
pp.：
214 – 218
Chapter 37. Kinetics of silicon amorphization by N + implantation:
dose rate and substrate temperature effects
pp.：
218 – 224
Chapter 38. Defects and solidification front morphologies in lamp zone-melting-recrystallized silicon-on-insulator films
pp.：
224 – 230
Chapter 39. Strain compensation effects on the annealing of Ge +-B +-implanted silicon
pp.：
230 – 236
Chapter 40. Correlation of thermal history and thermal donor formation
pp.：
236 – 244
Chapter 41. RTA-induced defects: a comparison between lamp and electron beam
techniques
pp.：
244 – 250
Chapter 42. Seeding recrystallization for producing thick silicon-on-insulator films on non-planar substrates
pp.：
250 – 256
Chapter 43. Investigation on the electrically inactive antimony at thermal equilibrium in silicon
pp.：
256 – 260
Chapter 44. Four-vacancy damage clusters in neutron-irradiated silicon
pp.：
260 – 264
Chapter 45. Iron diffusivity measurement with deep-level transient spectroscopy at room temperature
pp.：
264 – 270
Chapter 46. Thermal annealing of excimer-laser-induced defects in virgin silicon
pp.：
270 – 274
Chapter 47. New photoluminescence lines in selenium-doped silicon
pp.：
274 – 278
Chapter 48. Damage-free reactive ion etching of silicon in NF3 at low temperature
pp.：
278 – 282
Chapter 49. A uniaxial stress study of a copper-related photoluminescence band in silicon
pp.：
282 – 286
Chapter 50. Luminescence from transition metal centres in silicon doped with silver and nickel
pp.：
286 – 290
Chapter 51. Near-surface electrical effects of oxidation and hydrogenation in silicon
pp.：
290 – 294
Chapter 52. Perturbed angular correlation spectroscopy of hydrogen-passivated indium acceptors in silicon
pp.：
294 – 298
Chapter 53. Hydrogen-related electron traps in proton-bombarded float zone silicon
pp.：
298 – 304
Chapter 54. Thermal donors and oxygen-related complexes in silicon
pp.：
304 – 312
Chapter 55. Enhanced thermal donor formation and oxygen diffusion in silicon exposed to a hydrogen plasma
pp.：
312 – 316
Chapter 56. Isoelectronic bound exciton photoluminescence from a metastable defect in sulphur-doped silicon
pp.：
316 – 322
Chapter 57. In-diffusion of nitrogen from N2 ambient and its aggregation at lattice imperfections in silicon crystals
pp.：
322 – 328
Chapter 58. Ab-initio calculation so f hyperfine fields for chalcogen point defects and defect pairs in silicon: identification of the pair atomic structure
pp.：
328 – 334
Chapter 59. The effect of suicides on the induction and removal of defects in silicon
pp.：
334 – 344
Chapter 60. Effect of post-metallization annealing on W/Cr-metallized silicon junctions
pp.：
344 – 348
Chapter 61. Dislocations and mechanical properties of silicon
pp.：
348 – 356
Chapter 62. Processing effects on the electrical properties of defects in silicon
pp.：
356 – 360
Chapter 63. LBIC measurements of the recombining activity of dislocations in float zone silicon
pp.：
360 – 366
Chapter 64. Effect of oxygen and carbon segregation on the electrical properties of grain boundaries in silicon
pp.：
366 – 372
Chapter 65. Defect-related gate oxide breakdown
pp.：
372 – 380
Chapter 66. Increase of low-frequency-noise-generating defects in today's CMOS and BiCMOS technologies
pp.：
380 – 386
Chapter 67. Characterization of macroscopic defects in silicon after processing for CMOS and bipolar circuits
pp.：
386 – 390
Chapter 68. Reduction of process-induced defects in power devices
pp.：
390 – 396
Chapter 69. Effect of N+ ion implantation on the oxidation of silicon and metal–oxide–semiconductor characteristics
pp.：
396 – 400
Chapter 70. Effect of sputter-etching conditions on the barrier characteristics and the process-induced defects in (Ti-W)/Si Schottky diodes
pp.：
400 – 406
Chapter 71. Simulation of oxygen precipitation in Czochralski grown silicon
pp.：
406 – 414
Chapter 72. The role of atmospheric oxygen and water in the generation of water marks on the silicon surface in cleaning processes
pp.：
414 – 420
Chapter 73. Epitaxial silicon chemical vapor deposition below atmospheric pressure
pp.：
420 – 430
Chapter 74. The formation of dislocations and their in-situ detection during silicon vapour phase epitaxy at reduced temperature
pp.：
430 – 436
Chapter 75. A study of growth defects in seeded and unseeded silicon on insulator layers
pp.：
436 – 442
Chapter 76. High quality silicon-on-insulator substrates by implanted oxygen ions
pp.：
442 – 448
Chapter 77. Epitaxial silicon growth on porous silicon by reduced pressure,
low temperature chemical vapour deposition
pp.：
448 – 454
Chapter 78. Dry etching damage of silicon: a review
pp.：
454 – 470
Chapter 80. Photoluminescence study of reactive-ion-etched silicon: a new boron-related
defect
pp.：
470 – 474
Chapter 81. Photoluminescence of defects introduced by deuterium plasmas in silicon
pp.：
474 – 480
Chapter 82. Deep-level transient spectroscopy characterization of metallic contamination during plasma resist stripping
pp.：
480 – 484
Chapter 83. Mapping of electrically active defects in silicon by optical-beam-induced reflectance
pp.：
484 – 492
Chapter 84. Development of a scanning minority carrier transient spectroscopy method : application to the study of gold diffusion in a silicon bicrystal
pp.：
492 – 496
Chapter 85. An analysis of the oxygen condensation processes in silicon by laser-scanning tomography
pp.：
496 – 502
Chapter 86. Dispersive microwave transient spectroscopy of deep levels in semiconductors
pp.：
502 – 506
Chapter 87. Bonding in clusters and condensed matter : the role of electron correlations
pp.：
506 – 510
Author Index
pp.：
510 – 512
Subject Index
pp.：
512 – 519
Science and Technology of Defects in Silicon
( Volume 9 )
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