SiC Materials and Devices ( Volume 52 )

Publication series ：Volume 52

Author： Willardson   R. K.;Weber   Eicke R.  

Publisher： Elsevier Science‎

Publication year： 1998

E-ISBN: 9780080864501

P-ISBN(Paperback): 9780127521602

P-ISBN(Hardback):  9780127521602

Subject： TN4 microelectronics, integrated circuit (IC)

Language： ENG

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Description

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Chapter

Front Cover

pp.：  1 – 4

Sic Materials and Devices

pp.：  4 – 5

Copyright Page

pp.：  5 – 6

Contents

pp.：  6 – 10

List of Contributors

pp.：  10 – 12

Introduction

pp.：  12 – 16

Chapter 1. Materials Properties and Characterization of SiC

pp.：  16 – 36

Chapter 2. SiC Fabrication Technology: Growth and Doping

pp.：  36 – 92

Chapter 3. Building Blocks for SiC Devices: Ohmic Contacts, Schottky Contacts, and p-n Junctions

pp.：  92 – 176

Chapter 4. SiC Transistors

pp.：  176 – 210

Chapter 5. SiC for Applications in High-Power Electronics

pp.：  210 – 252

Chapter 6. SiC Microwave Devices

pp.：  252 – 298

Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes

pp.：  298 – 322

Chapter 8. Beyond Silicon Carbide! III–V Nitride-Based Heterostructures and Devices

pp.：  322 – 410

Index

pp.：  410 – 420

Contents of Volumes in this Series

pp.：  420 – 436

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