From Physics to Devices: Light Emissions in Silicon :Light Emissions in Silicon: From Physics to Devices ( Volume 49 )

Publication subTitle :Light Emissions in Silicon: From Physics to Devices

Publication series :Volume 49

Author: Willardson   R. K.;Weber   Eicke R.;Lockwood   David J.  

Publisher: Elsevier Science‎

Publication year: 1997

E-ISBN: 9780080864464

P-ISBN(Paperback): 9780127521572

P-ISBN(Hardback):  9780127521572

Subject: TN304.1 elemental semiconductor

Language: ENG

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Description

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Chapter

Front Cover

pp.:  1 – 4

Copyright Page

pp.:  5 – 6

Contents

pp.:  6 – 10

List of Contributors

pp.:  10 – 12

Abstract

pp.:  12 – 14

Preface

pp.:  14 – 18

Chapter 2. Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures

pp.:  54 – 94

Chapter 3. Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices

pp.:  94 – 128

Chapter 4. Erbium in Silicon

pp.:  128 – 174

Chapter 5. Silicon and Germanium Nanoparticles

pp.:  174 – 222

Chapter 6. Porous Silicon: Photoluminescence and Electroluminescent Devices

pp.:  222 – 270

Chapter 7. Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites

pp.:  270 – 320

Chapter 8. Silicon Polymers and Nanocrystals

pp.:  320 – 346

Index

pp.:  346 – 354

Contents of Volumes in This Series

pp.:  354 – 370

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