Hydrogen in Semiconductors
：Hydrogen in Silicon
( Volume 34 )
Publication subTitle ：Hydrogen in Silicon
Publication series ：Volume 34
Author： Pankove Jacques I.;Johnson Noble M.
Publisher： Elsevier Science
Publication year： 1991
E-ISBN: 9780080864310
P-ISBN(Paperback): 9780127521343
P-ISBN(Hardback): 9780127521343
Subject： TN304 material
Language： ENG
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Description
Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors.
Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference
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