Advances in Research and Development ：Modeling of Film Deposition for Microelectronic Applications ( Volume 23 )

Publication subTitle ：Modeling of Film Deposition for Microelectronic Applications

Publication series ：Volume 23

Author： Francombe   Maurice H.;Vossen   John L.  

Publisher： Elsevier Science‎

Publication year： 1997

E-ISBN: 9780080542904

P-ISBN(Paperback): 9780125330237

P-ISBN(Hardback):  9780125330237

Subject： O484 Keywords film physics

Language： ENG

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Description

Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

Chapter

Front Cover

pp.：  1 – 4

Thin Films

pp.：  4 – 5

Copyright Page

pp.：  5 – 6

Contents

pp.：  6 – 10

Contributors

pp.：  10 – 12

Preface

pp.：  12 – 18

Chapter 1. GexSi1- x Epitaxial Layer Growth and Application to Integrated Circuits

pp.：  18 – 100

Chapter 2. Platinum Silicide Internal Emission Infrared Imaging Arrays

pp.：  100 – 132

Chapter 3. Thin Film Epitaxial Layers on Silicon for the Detection of Infrared Signals

pp.：  132 – 190

Chapter 4. III-V Quantum-Well Structures for High-Speed Electronics

pp.：  190 – 234

Chapter 5. Quantum-Well Devices for Infrared Emission

pp.：  234 – 316

Author Index

pp.：  316 – 322

Subject Index

pp.：  322 – 330

Recent Volumes In this Series

pp.：  330 – 332

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