Low energy electron irradiation effect on optical and electrical properties of InGaN/GaN multiple quantum well structures

By Yakimov E.B.  

International Journal of Nanoparticles, Vol. 6, Iss. 2-3, 2013-06 ,pp. : 191-200

Inderscience Publishers

Access to resources Recommend Favorite

Photoluminescence properties of β-SiAlON:Yb2+, a novel green-emitting phosphor for white light-emitting diodes

By  

Science and Technology of Advanced Materials, Vol. 12, Iss. 3, 2011-06 ,pp. : 63-68

IOP Publishing

Access to resources Recommend Favorite

Direct measurement of photoluminescence spatial distribution near the GaAs/AlGaAs quantum well edge using a scanning near-field optical microscope

By Kazantsev D.V.   Gippius N.A.   Oshinowo J.   Forchel A.  

Ultramicroscopy, Vol. 71, Iss. 1, 1998-03 ,pp. : 235-241

Elsevier

Access to resources Recommend Favorite

Growth of bulk GaN single crystals by flux method

By  

Science and Technology of Advanced Materials, Vol. 6, Iss. 7, 2005-10 ,pp. : 46-51

IOP Publishing

Access to resources Recommend Favorite

Optical processes of red emission from Eu doped GaN

By  

Science and Technology of Advanced Materials, Vol. 6, Iss. 6, 2005-09 ,pp. : 96-100

IOP Publishing

Access to resources Recommend Favorite