A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

Author： Mckenzie Todd G.   Li Yiming  

Publisher： Inderscience Publishers

ISSN： 1742-7185

Source： International Journal of Computational Science and Engineering, Vol.2, Iss.3-4, 2007-03, pp. : 144-147

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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