Author： Shelimova L.E. Karpinskii O.G. Konstantinov P.P. Kretova M.A. Avilov E.S. Zemskov V.S.
Publisher： MAIK Nauka/Interperiodica
ISSN： 0020-1685
Source： Inorganic Materials, Vol.37, Iss.4, 2001-04, pp. : 342-348
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
The 620-K section of the Ge–Sb–Te phase diagram was mapped out using x-ray diffraction, microstructural analysis, and microhardness measurements. The transport properties of the layered tetradymite-like compounds nGeTe · mSb_2Te_3(n, m= 1–4) were studied in wide temperature ranges (Hall effect and electrical resistivity, from 77 to 800 K, and thermoelectric power, from 90 to 450 K). The results show that the nGeTe · mSb_2Te_3compounds are degeneratep-type semiconductors with a fairly high hole concentration due to the high density of intrinsic point defects. The temperature dependences of the Hall coefficient and resistivity exhibit anomalies related to solid-state phase transitions. The room-temperature lattice thermal conductivity ofnGeTe · mSb_2Te_3is fairly low, in the range 8–10 mW/(cm K).
Related content
Access to resources
Recommend
By Svechnikova T. Shelimova L. Konstantinov P. Kretova M. Avilov E. Zemskov V. Stiewe C. Müller E.
Inorganic Materials, Vol. 42, Iss. 12, 2006-12 ,pp. :