Kinetics of GaN radical-beam gettering epitaxy on GaAs substrates

By Rogozin I.   Georgobiani A.  

Inorganic Materials, Vol. 42, Iss. 12, 2006-12 ,pp. : 1342-1347

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation

By Georgobiani A.   Kotlyarevsky M.   Rogozin I.   Marakhovskii A.  

Inorganic Materials, Vol. 41, Iss. 6, 2005-06 ,pp. : 604-608

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of the Crystallographic Orientation of GaAs Substrates on the Composition of Ga_xIn_{1 – x}P Layers

By Kuznetsov V. V.   Lunin L. S.   Ratushnyi V. I.   Oliva E. V.   Shishkov M. V.  

Inorganic Materials, Vol. 40, Iss. 4, 2004-04 ,pp. : 327-330

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Degradation Mechanisms for GaN and GaAs High Speed Transistors

By Cheney David J.   Douglas Erica A.   Liu Lu   Lo Chien-Fong   Gila Brent P.   Ren Fan   Pearton Stephen J.  

Materials, Vol. 5, Iss. 12, 2012-11 ,pp. : 2498-2520

MDPI

Access to resources Recommend Favorite

Advances in GaN Crystals and Their Applications

By Lo Ikai  

Crystals, Vol. 8, Iss. 3, 2018-03 ,pp. : 117-117

MDPI

Access to resources Recommend Favorite