The role of nitrogen-containing compounds in the growth of oxide layers on GaAs and InP in the course of their thermal oxidation

Author: Lavrushina S.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1087-6596

Source: Glass Physics and Chemistry, Vol.32, Iss.1, 2006-01, pp. : 113-117

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Abstract