Optical emission characteristics of semipolar &(1,1,bar{2},2); GaN light-emitting diodes grown on m-sapphire and stripe-etched r-sapphire

Author： Leung Benjamin Zhang Yu Yerino Christopher D Han Jung Sun Qian Chen Zhen Lester Steve Liao Kuan-Yung Li Yun-Li

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.27, Iss.2, 2012-02, pp. : 24016-24022

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High brightness nonpolar a-plane (11–20) GaN light-emitting diodes

By Jung Sukkoo Chang Younghak Bang Kyu-Hyun Kim Hyung-Gu Choi Yoon-Ho Hwang Sung-Min

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24017-24020

IOP Publishing

Access to resources Recommend Favorite

Effects of the growth pressure of a-plane InGaN/GaN multi-quantum wells on the optical performance of light-emitting diodes

By Song Keun-Man Park Jinsub

Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15010-15014

IOP Publishing

Access to resources Recommend Favorite

Growth and characterization of a-plane InGaN/GaN multiple quantum well LEDs grown on r-plane sapphire

By Kim Jong-Min Shin Chan-Soo Hwang Sung-Min Yoon Dae-Ho

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15011-15016

IOP Publishing

Access to resources Recommend Favorite

Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates

By Okada Narihito Tadatomo Kazuyuki

Semiconductor Science and Technology, Vol. 27, Iss. 2, 2012-02 ,pp. : 24003-24011

IOP Publishing

Access to resources Recommend Favorite

GaN grown on nano-patterned sapphire substrates

By Jing Kong Meixin Feng Jin Cai Hui Wang Huaibing Wang Hui Yang

Journal of Semiconductors, Vol. 36, Iss. 4, 2015-04 ,pp. : 43003-43006

IOP Publishing

Access to resources Recommend Favorite