The GaAs scene in 1962: the battle with Si

Author：  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.1, 2013-01, pp. : 15028-15031

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Dislocation filters in GaAs on Si

By George I   Becagli F   Liu H Y   Wu J   Tang M   Beanland R  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114004-114008

IOP Publishing

Access to resources Recommend Favorite

Si takes SiGe, GaAs & InP into its roadmap

By Purvis G.  

III-Vs Review, Vol. 16, Iss. 6, 2003-08 ,pp. : 2-2

Elsevier

Access to resources Recommend Favorite

Comparison of GaAs grown on standard Si (511) and compliant SOI (511)

By Seaford M.   Tomich D.   Eyink K.   Grazulis L.   Mahalingham K.   Yang Z.   Wang W.  

Journal of Electronic Materials, Vol. 29, Iss. 7, 2000-07 ,pp. : 906-908

Springer Publishing Company

Access to resources Recommend Favorite

Structure of Fe

By Jenichen B   Jahn U   Nikulin A   Herfort J   Kirmse H  

Semiconductor Science and Technology, Vol. 30, Iss. 11, 2015-11 ,pp. : 114005-114013

IOP Publishing

Access to resources Recommend Favorite

Characteristics of Si 3 N 4 /GaAs metal-lnsulator-semiconductor interfaces with coherent Si/Al 0.3 Ga 0.7 As interlayers

By Park Dae-Gyu   Chen Zhi   Morkoç Hadis  

Journal of Electronic Materials, Vol. 26, Iss. 9, 1997-09 ,pp. : 1076-1082

Springer Publishing Company

Access to resources Recommend Favorite