Dependence of the emission properties of the germanium lone pair center on Ge doping of silica

Author： Alessi A Agnello S Ouerdane Y Gelardi F M

ISSN： 0953-8984

Source： Journal of Physics: Condensed Matter, Vol.23, Iss.1, 2011-01, pp. : 15903-15908

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influence of lone pair doping on the multiferroic property of orthorhombic HoMnO₃: ab initio prediction

By Yamauchi Kunihiko Ozaki Taisuke Oguchi Tamio Natesan Baskaran

Journal of Physics: Condensed Matter, Vol. 25, Iss. 38, 2013-09 ,pp. : 385901-385908

IOP Publishing

Access to resources Recommend Favorite

Experimental clarification of orientation dependence of germanium PMOSFETs with Al2O3/GeOx/Ge gate stack

Chinese Physics B, Vol. 23, Iss. 11, 2014-11 ,pp. : 118506-118509

IOP Publishing

Access to resources Recommend Favorite

Dependence of the particle emission during the fracture of silica glass on its mechanical property

Journal of Physics: Conference Series , Vol. 100, Iss. 7, 2008-03 ,pp. : 167-170

IOP Publishing

Access to resources Recommend Favorite

Theory for superconducting properties of the cuprates: doping dependence of theelectronic excitations and shadow states

By Grabowski S. Langer M. Schmalian J. Bennemann K. H.

EPL (EUROPHYSICS LETTERS), Vol. 34, Iss. 3, 2010-03 ,pp. : 219-224

Edp Sciences

Access to resources Recommend Favorite

Infrared emission of germanium.

Journal de Physique et le Radium, Vol. 17, Iss. 8-9, 1956-08 ,pp. : 709-711

Edp Sciences

Access to resources Recommend Favorite