Electron transport through dangling-bond silicon wires on H-passivated Si(100)

Author: Kepenekian Mikaël   Novaes Frederico D   Robles Roberto   Monturet Serge   Kawai Hiroyo   Joachim Christian   Lorente Nicolás  

Publisher: IOP Publishing

ISSN: 0953-8984

Source: Journal of Physics: Condensed Matter, Vol.25, Iss.2, 2013-01, pp. : 25503-25513

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Abstract