Crystal lattice defects and Hall mobility of electrons in Si: Er/Si layers grown by sublimation molecular-beam epitaxy

By Kuznetsov V.   Rubtsova R.   Shabanov V.   Kasatkin A.   Sedova S.   Maksimov G.   Krasil’nik Z.   Demidov E.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 102-105

MAIK Nauka/Interperiodica

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Buckling reversal of the Si(111) bilayer termination of 2-dimensional ErSi2 upon H dosing

By Wetzel P.   Pirri C.   Gewinner G.  

EPL (EUROPHYSICS LETTERS), Vol. 38, Iss. 5, 2010-03 ,pp. : 359-364

Edp Sciences

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Hydrogen-induced semimetal-semiconductor transition of two-dimensional ErSi₂ detected by electron energy loss spectroscopy

By Angot T.   Koulmann J. J.   Gewinner G.  

EPL (EUROPHYSICS LETTERS), Vol. 35, Iss. 3, 2010-03 ,pp. : 215-220

Edp Sciences

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Analysis of the gain and luminescence properties of Si/Si_1−x G_x: Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase

By Krasil’nikova L.   Stepikhova M.   Drozdov Yu.   Drozdov M.   Krasil’nik Z.   Shengurov V.   Chalkov V.   Svetlov S.   Gusev O.  

Physics of the Solid State, Vol. 47, Iss. 1, 2005-01 ,pp. : 93-97

MAIK Nauka/Interperiodica

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Influence of Er and O concentrations on the microstructure and luminescence of Si:Er/O LEDs

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Journal of Physics: Conference Series , Vol. 100, Iss. 4, 2008-03 ,pp. : 38-42

IOP Publishing

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