Metal Site Doping in the Narrow-Gap FeGa3 Semiconductor

Author: Kotur B.   Babizhetskyy V.   Bauer E.   Kneidinger F.   Danner A.   Leber L.   Michor H.  

Publisher: Springer Publishing Company

ISSN: 1068-820X

Source: Materials Science, Vol.49, Iss.2, 2013-09, pp. : 211-219

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