Author: Kenyon M. Cobb J.L. Amar A. Song D. Zimmerman N.M. Lobb C.J. Wellstood F.C.
Publisher: Springer Publishing Company
ISSN: 0022-2291
Source: Journal of Low Temperature Physics, Vol.123, Iss.1-2, 2001-04, pp. : 103-126
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Noise performance of the radio-frequency single-electron transistor
By Bladh K. Gunnarsson D. Aassime A. Taslakov M. Schoelkopf R. Delsing P.
Physica E, Vol. 18, Iss. 1, 2003-05 ,pp. :
A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor
Materials Science Forum, Vol. 2018, Iss. 913, 2018-03 ,pp. :