Author： Gordon E.B. Usenko A. Frossati G.
Publisher： Springer Publishing Company
ISSN： 0022-2291
Source： Journal of Low Temperature Physics, Vol.130, Iss.1-2, 2003-01, pp. : 15-23
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Abstract
We have developed a new technique to imbed impurities in solid 4He. It consists in injecting helium gas mixed with the impurity on the top surface of Helium liquid-solid interface, with the solid continuously moving downwards by pumping at the bottom of the cell. Due to the large temperature gradient, sedimentation occurs through the thin (1–2 mm) upper layer of liquid helium. We achieved a guest-particle density of 3 ⋅ 1019 per cm3 and a doped crystal growth rate of 0.05 mm/s. The possibilities of this novel method for matrix isolation spectroscopy as well as for quantum crystal studies are discussed.
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