On the Nature of the “Low-Temperature Anomaly” in Metal–Semiconductor Schottky-Barrier Contacts

By Bozhkov V.G.  

Radiophysics and Quantum Electronics, Vol. 45, Iss. 5, 2002-05 ,pp. : 381-390

Springer Publishing Company

Access to resources Recommend Favorite

Study of the Correlation between Low-Frequency Noise and the Current-Voltage Characteristic of a GaAs Schottky-Barrier Diode

By Bozhkov V.G.   Tabakaeva T.M.   Usol'tzev A.A.  

Radiophysics and Quantum Electronics, Vol. 45, Iss. 7, 2002-07 ,pp. : 554-560

Springer Publishing Company

Access to resources Recommend Favorite

Investigation of the possibilities of the ‘saddle points’ model for an explanation of anomalies in the characteristics of Schottky-barrier contacts

By  

Semiconductor Science and Technology, Vol. 30, Iss. 12, 2015-12 ,pp. : 125004-125016

IOP Publishing

Access to resources Recommend Favorite

Improvements on high voltage capacity and high temperature performances of Si-based Schottky potential barrier diode

By  

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24013-24016

IOP Publishing

Access to resources Recommend Favorite

A simple model for extraction of interface state density of a Schottky barrier diode using reverse bias C-V plots

By Pandey Santosh   Kal S.  

International Journal of Electronics, Vol. 87, Iss. 2, 2000-02 ,pp. : 153-161

Taylor & Francis Ltd

Access to resources Recommend Favorite