Natural ageing effects of Schottky-gate GaAs FETs in current-voltage characteristics and in 1/f noise spectrum

Author： Moryashin A.   Obolensky S.   Perov M.   Yakimov A.  

Publisher： Springer Publishing Company

ISSN： 0033-8443

Source： Radiophysics and Quantum Electronics, Vol.50, Iss.2, 2007-02, pp. : 135-145

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