Optical Characterization of N-Doped GaN-AlxGa1−xN Multi Quantum Wells by Using Infrared Magnetoplasma Spectroscopy

Author： Shayesteh S. Farjami  

Publisher： Springer Publishing Company

ISSN： 0195-9271

Source： International Journal of Infrared and Millimeter Waves, Vol.24, Iss.11, 2003-11, pp. : 1875-1883

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Design of a Resonant-Cavity-Enhanced p-i-n GaN/AlxGa1-xN Photodetector

By Li T.   Carrano J. C.   Eiting C. J.   Grudowski P. A.   Lambert D. J. H.   Kwon H. K.   Dupuis R. D.   Campbell J. C.   Tober R. T.  

Fiber And Integrated Optics, Vol. 20, Iss. 2, 2001-03 ,pp. : 125-131

Taylor & Francis Ltd

Access to resources Recommend Favorite

Phonon heat conduction in AlxGa1-xN film

By Barman Saswati   Ganguly Arnab   Barman Anjan  

EPL (EUROPHYSICS LETTERS), Vol. 97, Iss. 3, 2012-02 ,pp. : 36011-36011

Edp Sciences

Access to resources Recommend Favorite

Pressure dependence of energy band gaps forAlxGa1 - xN,InxGa1 - xN andInxAl1 - xN

By  

New Journal of Physics, Vol. 4, Iss. 1, 2002-11 ,pp. : 1368-1382

IOP Publishing

Access to resources Recommend Favorite

Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa 1 - xAs single quantum wells

By Freire A.K.   Farias G.A.   Freire V.N.   Ferreira E.C.  

Superlattices and Microstructures, Vol. 23, Iss. 5, 1998-05 ,pp. : 1015-1018

Academic Press

Access to resources Recommend Favorite

Localized deep levels in AlxGa1−xN epitaxial films with various Al compositions

By  

Chinese Physics B, Vol. 23, Iss. 11, 2014-11 ,pp. : 116102-116106

IOP Publishing

Access to resources Recommend Favorite