Author: Reuther H. Betzl M. Matz W. Richter E.
Publisher: Springer Publishing Company
ISSN: 0304-3843
Source: Hyperfine Interactions, Vol.113, Iss.1-4, 1998-08, pp. : 391-401
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Auger analysis of high-dose ion-implantation of arsenic in silicon
Journal of Physics: Conference Series , Vol. 356, Iss. 1, 2012-03 ,pp. :
Secondary ion mass spectrometer based on a high-dose ion implanter
By Baturin V. Eremin S. Pustovotov S.
Technical Physics, Vol. 52, Iss. 6, 2007-06 ,pp. :