Search for ferromagnetic ordering in Pd doped wide band gap semiconductors GaN and ZnO

Author： Kessler P.   Müller K.   Geruschke T.   Timmers H.   Byrne A.   Vianden R.  

Publisher： Springer Publishing Company

ISSN： 0304-3843

Source： Hyperfine Interactions, Vol.197, Iss.1-3, 2010-04, pp. : 155-158

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Radiospectroscopy of wide-gap semiconductors: SiC and GaN

By Baranov P.  

Physics of the Solid State, Vol. 41, Iss. 5, 1999-05 ,pp. : 712-715

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Ferromagnetic spin ordering in amorphous Co-doped InGaZnO based on the Co–H–Co complex

By Lee Seunghun   Kim Won-Kyung   Cho Yong Chan   Seo Seung-Wan   Bae Jong-Seong   Cho Chae Ryong   Koinuma Hideomi   Jeong Se-Young  

EPL (EUROPHYSICS LETTERS), Vol. 98, Iss. 1, 2012-04 ,pp. : 17008-17008

Edp Sciences

Access to resources Recommend Favorite

Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: Recent EPR studies

By Baranov P.   Il’in I.   Mokhov E.   Khramtsov V.  

Physics of the Solid State, Vol. 41, Iss. 5, 1999-05 ,pp. : 783-785

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Narrowing of band gap and low-temperature spin glass behavior of FeNi co-doped ZnO nanowires

By  

EPL (EUROPHYSICS LETTERS), Vol. 87, Iss. 5, 2009-09 ,pp. : 57004-57004

Edp Sciences

Access to resources Recommend Favorite

Band gap engineering of ZnO by doping with Mg

By  

Physica Scripta, Vol. 90, Iss. 8, 2015-01 ,pp. : 85502-85507

IOP Publishing

Access to resources Recommend Favorite