Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

Author: Sarzała Robert   Nakwaski Włodzimierz  

Publisher: Springer Publishing Company

ISSN: 0306-8919

Source: Optical and Quantum Electronics, Vol.38, Iss.4-6, 2006-03, pp. : 293-311

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