

Author: Halder Sandip Schneller Theodor Waser Rainer Thomas Florian
Publisher: Springer Publishing Company
ISSN: 0928-0707
Source: Journal of Sol-Gel Science and Technology, Vol.42, Iss.3, 2007-06, pp. : 203-207
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Abstract
Nickel thin films have been sputtered on standard Si/SiO2 substrates with TiO2 as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO3 and (Ba,Sr)TiO3 dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.
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