Physics of semiconductors and dielectrics theoretical and experimental study of surface Processes during vapor-phase epitaxy of III–V compounds

By Bobrovnikova I.   Ivonin I.   Toropov S.  

Russian Physics Journal, Vol. 49, Iss. 5, 2006-05 ,pp. : 455-460

Springer Publishing Company

Access to resources Recommend Favorite

Fundamental growth processes in the molecular beam epitaxy of III-V compounds - an historical perspective

By Joyce B.A.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 3-5

Elsevier

Access to resources Recommend Favorite

On the chloride vapor-phase epitaxy growth of GaN and its characterization

By Varadarajan E.   Puviarasu P.   Kumar J.   Dhanasekaran R.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 43-49

Elsevier

Access to resources Recommend Favorite

The growth of the Cd x Zn 1-x Te epilayers by low-pressure metalorganic vapor-phase epitaxy

By Zhang Z.Z.   Shen D.Z.   Shan C.X.   Zhang J.Y.   Lu Y.M.   Liu Y.C.   Fan X.W.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 211-215

Elsevier

Access to resources Recommend Favorite

Surface reactions and kinetic phenomena in molecular layer epitaxy of III-V semiconductor compounds

By Nishizawa J.-I.   Kurabayashi T.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 179-186

Elsevier

Access to resources Recommend Favorite