Photoelectrical Characteristics of MIS Structures on the Basis of Heteroepitaxial HgCdTe

By Voitsekhovskii A.   Nesmelov S.   Kokhanenko A.   Mashukov Yu.   Zakhar’yash T.   Vasil’ev V.   Varavin V.   Sidorov Yu.   Dvoretskii S.   Mikhailov N.  

Russian Physics Journal, Vol. 48, Iss. 2, 2005-02 ,pp. : 143-147

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Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric

By Voitsekhovskii A.   Nesmelov S.   Dzyadukh S.   Varavin V.   Dvoretskii S.   Mikhailov N.   Sidorov Yu.   Vasil’ev V.   Yakushev M.  

Russian Physics Journal, Vol. 53, Iss. 2, 2010-07 ,pp. : 148-154

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The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE

By Voitsekhovskii A.   Korotaev A.   Kokhanenko A.   Grigor’ev D.   Varavin V.   Dvoretskii S.   Sidorov Yu.   Mikhailov N.   Talipov N.  

Russian Physics Journal, Vol. 49, Iss. 9, 2006-09 ,pp. : 929-933

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Model representation of the transmission of high-power pulsed laser IR radiation in the fundamental absorption region in Cd _x Hg_1–x Te epitaxial layers

By Voitsekhovskii A.   Shulga S.   Sredin V.   Talipov N.  

Russian Physics Journal, Vol. 53, Iss. 9, 2011-02 ,pp. : 936-942

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Magnetic and band parameters of (3HgS)_1–x (Al₂S₃) _x (x = 0.5) crystals doped with manganese

By Mar’yanchuk P.   Koziarskyi I.  

Russian Physics Journal, Vol. 53, Iss. 1, 2010-06 ,pp. : 60-66

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