Author： Brudnyi V. Grinyaev S.
Publisher： Springer Publishing Company
ISSN： 1064-8887
Source： Russian Physics Journal, Vol.53, Iss.7, 2010-12, pp. : 703-705
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Preparation and optical properties of Ge and C-induced Ge quantum dots on Si
By Eberl K. Schmidt O.G. Kienzle O. Ernst F.
Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. :
Access to resources
Recommend
Ge-Si intermixing in Ge quantum dots on Si
By Boscherini F. Capellini G. Di Gaspare L. De Seta M. Rosei F. Sgarlata A. Motta N. Mobilio S.
Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. :
By Markov V.A. Cheng H.H. Chia C.-t. Nikiforov A.I. Cherepanov V.A. Pchelyakov O.P. Zhuravlev K.S. Talochkin A.B. McGlynn E. Henry M.O.
Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. :
Strained SiGe/Si quantum well dots and wires selectively grown by LPCVD and their optical properties
By Vescan L.
Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. :
Raman versus interband absorption in Ge quantum dots
By Stella A. Tognini P. Bottani C.E. Milani P. Cheyssac P. Kofman R.
Thin Solid Films, Vol. 318, Iss. 1, 1998-04 ,pp. :