Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method

Author: Torrente Giulio   Castellani Niccolò   Ghetti Andrea   Monzio Compagnoni Christian   Lacaita Andrea   Spinelli Alessandro   Benvenuti Augusto  

Publisher: Springer Publishing Company

ISSN: 1569-8025

Source: Journal of Computational Electronics, Vol.12, Iss.4, 2013-12, pp. : 585-591

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Abstract