Modeling of Transport Through Submicron Semiconductor Structures: A Direct Solution to the Coupled Poisson-Boltzmann Equations

By Csontos D.   Ulloa S.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 215-219

Springer Publishing Company

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A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Carrillo José A.   Gamba Irene M.   Majorana Armando   Shu Chi-Wang  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 375-380

Springer Publishing Company

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Modeling of Current Density Boundary Conditions for a Heterodimensional Contact of 3D-Metal to 2D-Semiconductor

By Katkar Rajesh A.   Tait Gregory B.  

Journal of Computational Electronics, Vol. 3, Iss. 1, 2004-01 ,pp. : 5-12

Springer Publishing Company

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Efficient time integration of the Boltzmann-Poisson system applied to semiconductor device simulation

By Auer Ch.   Schürrer F.  

Journal of Computational Electronics, Vol. 5, Iss. 1, 2006-03 ,pp. : 5-14

Springer Publishing Company

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Analytical Solution to Harmonic Characteristics of Three-Phase PWM Inverter Using 3-D Modulation Model

By TSENG KUO-HSIUNG   KAO WEN-SHIOW   CHENG YUNG-FU   LIN SHIN-FU  

Electric Power Components and Systems, Vol. 32, Iss. 11, 2004-11 ,pp. : 1105-1120

Taylor & Francis Ltd

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