The Progress of YMnO3/Y2O3/Si System for a Ferroelectric Gate Field Effect Transistor

Author: Fujimura Norifumi   Ito Daisuke   Ito Taichro  

Publisher: Taylor & Francis Ltd

ISSN: 0015-0193

Source: Ferroelectrics, Vol.271, Iss.1, 2002-01, pp. : 229-234

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