Fast photoluminescence decay processes of doped CaS Phosphors

Author: Bhatt H.   Sharma Rajesh   Verma N.  

Publisher: Taylor & Francis Ltd

ISSN: 1042-0150

Source: Radiation Effects and Defects in Solids, Vol.161, Iss.2, 2006-02, pp. : 113-119

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Abstract

Singly and doubly doped CaS phosphors have been synthesized using the flux method. Excited-state lifetime measurements have been carried out for CaS doped with Mn and quencher impurities (Fe or Co or Ni) having doping concentrations 0.05–0.70% by weight, using pulsed-UV laser (nitrogen laser) as the excitation source having pulse width (10 ns) and peak power (200 kW per pulse). Laser-induced photoluminescence has been observed in CaS-doped phosphors when these phosphors were excited by the pulsed-UV N 2 laser radiation. Owing to the downconversion phenomenon, fast photoluminescence emission in the visible region is recorded in microseconds time domain for CaS:Mn, whereas in case of CaS:Mn:Ni, shortest component of lifetime values reduces to nanoseconds time domain.