Determination of the thickness and optical constants of amorphous Ge-Se-Bi thin films

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The effect of Te isoelectronic substitution on the electrical and optical properties of the Ge-S-Se amorphous chalcogenide system studied in thin films

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Holographic investigations of photoinduced changes in PECVD Ge-Se thin films

By Boev V.   Mitkova M.   Sleeckx E.   Nagels P.   Markovsky P.   Zlatanova K.  

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Laser-induced changes in some of the optical properties of Ge 20 Bi 10 Se 70 thin films

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On the optical constants of amorphous Ge x Se 1-x thin films of non-uniform thickness prepared by plasma-enhanced chemical vapour deposition

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