Study of p-ZnO Fabricated by Thermally Oxidized Zn3N2

Author: Kuo Hsin-Hui   Lan Wen-How   Shih Ming-Chang   Huang Chien-Jung   Chen Chin-Fu   Feng David Jui-Yang  

Publisher: Taylor & Francis Ltd

ISSN: 1058-4587

Source: Integrated Ferroelectrics, Vol.143, Iss.1, 2013-01, pp. : 58-64

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Abstract

The ZnO thin films prepared by the oxidation of Zn3N2 thin film with different oxidation temperature were characterized. The surface morphology analyzed by scanning electron microscope was studied. A smooth surface morphology can be achieved with the oxidation temperature reached 500°C. X-ray diffraction patterns show that the ZnO structure can be formed with the oxidation temperature higher than 300°C. P-type ZnO with concentration around 1017 cm−3 can be achieved stably within the temperature 400 to 600°C. The p-ZnO/n-Si diode was achieved and characterized by applying the p-ZnO film on the n-Si substrate. For such heterostructure diode, the enhancement of the ultraviolet band responsivity can be characterized. The p-ZnO resulted from the oxidation of Zn3N2 show a promising responsivity enhancement in Si-contained heterostructure p-n diode.