Dynamics of formation of the mosaic structure of porous silicon during prolonged anodic etching in electrolytes with an internal current source

By Tynyshtykbaev K.   Ryabikin Yu.   Mit’ K.   Rakymetov B.   Aitmukan T.  

Physics of the Solid State, Vol. 53, Iss. 8, 2011-08 ,pp. : 1575-1580

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Formation of a two-sided porous structure during electrochemical silicon etching by the Unno-Imai method

By Zimin S.   Preobrazhenskii M.   Zimin D.  

Technical Physics Letters, Vol. 26, Iss. 1, 2000-01 ,pp. : 12-14

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

SELECTIVE ETCHING OF n-TYPE GaAs IN A CrO3-HF-H2O SYSTEM UNDER LASER ILLUMINATION

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-313-C5-319

Edp Sciences

Access to resources Recommend Favorite

Etching Properties of HfO2 Thin Films in Cl2/BCl3/Ar Plasma

By Kim Dong-Pyo   Kim Gwan-Ha   Woo Jong-Chang   Yang Xue   Um Doo-Seung   Kim Chang-Il  

Ferroelectrics, Vol. 381, Iss. 1, 2009-01 ,pp. : 30-40

Taylor & Francis Ltd

Access to resources Recommend Favorite

Luminescent porous silicon prepared by reactive ion etching

By Karbassian Farshid   Rajabali Shima   Chimeh Abbas   Mohajerzadeh Shams   Asl-Soleimani Ebrahim  

Journal of Physics D: Applied Physics, Vol. 47, Iss. 38, 2014-09 ,pp. : 385103-385110

IOP Publishing

Access to resources Recommend Favorite