Chapter
2.2 Electrical and Optical Properties
2.2.2 Optical Absorption Coefficient and Refractive Index
2.2.3 Impurity Doping and Carrier Density
2.2.6 Breakdown Electric Field Strength
2.3 Thermal and Mechanical Properties
2.3.1 Thermal Conductivity
2.3.3 Hardness and Mechanical Properties
Chapter 3 Bulk Growth of Silicon Carbide
3.1.1 Phase Diagram of Si-C
3.1.2 Basic Phenomena Occurring during the Sublimation (Physical Vapor Transport) Method
3.1.3 Modeling and Simulation
3.2 Polytype Control in Sublimation Growth
3.3 Defect Evolution and Reduction in Sublimation Growth
3.3.3 Threading Screw Dislocation
3.3.4 Threading Edge Dislocation and Basal Plane Dislocation
3.4 Doping Control in Sublimation Growth
3.4.1 Impurity Incorporation
3.5 High-Temperature Chemical Vapor Deposition
3.7 3C-SiC Wafers Grown by Chemical Vapor Deposition
3.8 Wafering and Polishing
Chapter 4 Epitaxial Growth of Silicon Carbide
4.1 Fundamentals of SiC Homoepitaxy
4.1.1 Polytype Replication in SiC Epitaxy
4.1.2 Theoretical Model of SiC Homoepitaxy
4.1.3 Growth Rate and Modeling
4.1.4 Surface Morphology and Step Dynamics
4.1.5 Reactor Design for SiC Epitaxy
4.2 Doping Control in SiC CVD
4.3 Defects in SiC Epitaxial Layers
4.4 Fast Homoepitaxy of SiC
4.5 SiC Homoepitaxy on Non-standard Planes
4.5.1 SiC Homoepitaxy on Nearly On-Axis {0001}
4.5.2 SiC Homoepitaxy on Non-basal Planes
4.5.3 Embedded Homoepitaxy of SiC
4.6 SiC Homoepitaxy by Other Techniques
4.7 Heteroepitaxy of 3C-SiC
4.7.1 Heteroepitaxial Growth of 3C-SiC on Si
4.7.2 Heteroepitaxial Growth of 3C-SiC on Hexagonal SiC
Chapter 5 Characterization Techniques and Defects in Silicon Carbide
5.1 Characterization Techniques
5.1.3 Hall Effect and Capacitance-Voltage Measurements
5.1.4 Carrier Lifetime Measurements
5.1.5 Detection of Extended Defects
5.1.6 Detection of Point Defects
5.2 Extended Defects in SiC
5.2.1 Major Extended Defects in SiC
5.2.2 Bipolar Degradation
5.2.3 Effects of Extended Defects on SiC Device Performance
5.3.1 Major Deep Levels in SiC
5.3.2 Carrier Lifetime Killer
Chapter 6 Device Processing of Silicon Carbide
6.1.1 Selective Doping Techniques
6.1.2 Formation of an n-Type Region by Ion Implantation
6.1.3 Formation of a p-Type Region by Ion Implantation
6.1.4 Formation of a Semi-Insulating Region by Ion Implantation
6.1.5 High-Temperature Annealing and Surface Roughening
6.1.6 Defect Formation by Ion Implantation and Subsequent Annealing
6.2.1 Reactive Ion Etching
6.2.2 High-Temperature Gas Etching
6.3 Oxidation and Oxide/SiC Interface Characteristics
6.3.2 Dielectric Properties of Oxides
6.3.3 Structural and Physical Characterization of Thermal Oxides
6.3.4 Electrical Characterization Techniques and Their Limitations
6.3.5 Properties of the Oxide/SiC Interface and Their Improvement
6.3.6 Interface Properties of Oxide/SiC on Various Faces
6.3.7 Mobility-Limiting Factors
6.4.1 Schottky Contacts on n-Type and p-Type SiC
6.4.2 Ohmic Contacts to n-Type and p-Type SiC
Chapter 7 Unipolar and Bipolar Power Diodes
7.1 Introduction to SiC Power Switching Devices
7.1.2 Unipolar Power Device Figure of Merit
7.1.3 Bipolar Power Device Figure of Merit
7.2 Schottky Barrier Diodes (SBDs)
7.3 pn and pin Junction Diodes
7.3.1 High-Level Injection and the Ambipolar Diffusion Equation
7.3.2 Carrier Densities in the "i'' Region
7.3.3 Potential Drop across the "i'' Region
7.3.4 Current–Voltage Relationship
7.4 Junction-Barrier Schottky (JBS) and Merged pin-Schottky (MPS) Diodes
Chapter 8 Unipolar Power Switching Devices
8.1 Junction Field-Effect Transistors (JFETs)
8.1.2 Current–Voltage Relationship
8.1.3 Saturation Drain Voltage
8.1.4 Specific On-Resistance
8.1.5 Enhancement-Mode and Depletion-Mode Operation
8.1.6 Power JFET Implementations
8.2 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
8.2.1 Review of MOS Electrostatics
8.2.2 MOS Electrostatics with Split Quasi-Fermi Levels
8.2.3 MOSFET Current-Voltage Relationship
8.2.4 Saturation Drain Voltage
8.2.5 Specific On-Resistance
8.2.6 Power MOSFET Implementations: DMOSFETs and UMOSFETs
8.2.7 Advanced DMOSFET Designs
8.2.8 Advanced UMOS Designs
8.2.9 Threshold Voltage Control
8.2.10 Inversion Layer Electron Mobility
8.2.12 MOSFET Transient Response
Chapter 9 Bipolar Power Switching Devices
9.1 Bipolar Junction Transistors (BJTs)
9.1.4 Current–Voltage Relationship
9.1.5 High-Current Effects in the Collector: Saturation and Quasi-Saturation
9.1.6 High-Current Effects in the Base: the Rittner Effect
9.1.7 High-Current Effects in the Collector: Second Breakdown and the Kirk Effect
9.1.8 Common Emitter Current Gain: Temperature Dependence
9.1.9 Common Emitter Current Gain: the Effect of Recombination
9.2 Insulated-Gate Bipolar Transistors (IGBTs)
9.2.1 Current–Voltage Relationship
9.2.3 Switching Characteristics
9.2.4 Temperature Dependence of Parameters
9.3.1 Forward Conducting Regime
9.3.2 Forward Blocking Regime and Triggering
9.3.3 The Turn-On Process
9.3.5 The dI/dt Limitation
9.3.6 The Turn-Off Process
9.3.7 Reverse-Blocking Mode
Chapter 10 Optimization and Comparison of Power Devices
10.1 Blocking Voltage and Edge Terminations for SiC Power Devices
10.1.1 Impact Ionization and Avalanche Breakdown
10.1.2 Two-Dimensional Field Crowding and Junction Curvature
10.1.3 Trench Edge Terminations
10.1.4 Beveled Edge Terminations
10.1.5 Junction Termination Extensions (JTEs)
10.1.6 Floating Field-Ring (FFR) Terminations
10.1.7 Multiple-Floating-Zone (MFZ) JTE and Space-Modulated (SM) JTE
10.2 Optimum Design of Unipolar Drift Regions
10.2.1 Vertical Drift Regions
10.2.2 Lateral Drift Regions
10.3 Comparison of Device Performance
Chapter 11 Applications of Silicon Carbide Devices in Power Systems
11.1 Introduction to Power Electronic Systems
11.2 Basic Power Converter Circuits
11.2.1 Line-Frequency Phase-Controlled Rectifiers and Inverters
11.2.2 Switch-Mode DC–DC Converters
11.2.3 Switch-Mode Inverters
11.3 Power Electronics for Motor Drives
11.3.1 Introduction to Electric Motors and Motor Drives
11.3.3 Induction Motor Drives
11.3.4 Synchronous Motor Drives
11.3.5 Motor Drives for Hybrid and Electric Vehicles
11.4 Power Electronics for Renewable Energy
11.4.1 Inverters for Photovoltaic Power Sources
11.4.2 Converters for Wind Turbine Power Sources
11.5 Power Electronics for Switch-Mode Power Supplies
11.6 Performance Comparison of SiC and Silicon Power Devices
Chapter 12 Specialized Silicon Carbide Devices and Applications
12.1.1 Metal-Semiconductor Field-Effect Transistors (MESFETs)
12.1.2 Static Induction Transistors (SITs)
12.1.3 Impact Ionization Avalanche Transit-Time (IMPATT) Diodes
12.2 High-Temperature Integrated Circuits
12.3.1 Micro-Electro-Mechanical Sensors (MEMS)
Appendix A Incomplete Dopant Ionization in 4H-SiC
Appendix B Properties of the Hyperbolic Functions
Appendix C Major Physical Properties of Common SiC Polytypes
C.2 Temperature and/or Doping Dependence of Major Physical Properties
Fundamentals of Silicon Carbide Technology
：Growth, Characterization, Devices and Applications
( Wiley - IEEE )
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