Sb-mediated Ge quantum dots in Ti–oxide–Si diode: negative differential capacitance

Publisher: IOP Publishing

ISSN: 1468-6996

Source: Science and Technology of Advanced Materials, Vol.14, Iss.3, 2013-06, pp. : 49-55

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract