Publisher： IOP Publishing
ISSN： 1757-899X
Source： IOP Conference Series: Materials Science and Engineering, Vol.6, Iss.1, 2009-11, pp. : 97-100
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Access to resources
Recommend
TCAD Study of the Raised SiGe Source/Drain in 40nm PMOS
Key Engineering Materials, Vol. 2015, Iss. 645, 2015-06 ,pp. :
Access to resources
Atomistic Model for Ge Condensation under SiGe Oxidation
Defect and Diffusion Forum, Vol. 2015, Iss. 363, 2015-06 ,pp. :
Wet Selective SiGe Etch to Enable Ge Nanowire Formation
Solid State Phenomena, Vol. 2016, Iss. 255, 2016-10 ,pp. :