A defective graphene phase predicted to be a room temperature ferromagnetic semiconductor

ISSN： 1367-2630

Source： New Journal of Physics, Vol.10, Iss.3, 2008-03, pp. : 8-16

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Canted antiferromagnetic to ferromagnetic phase transition in bilayer graphene

Journal of Physics: Conference Series , Vol. 647, Iss. 1, 2015-10 ,pp. : 183-186

IOP Publishing

Access to resources Recommend Favorite

Room temperature velocity saturation in intrinsic graphene

Journal of Physics: Conference Series , Vol. 193, Iss. 1, 2009-11 ,pp. : 474-479

IOP Publishing

Access to resources Recommend Favorite

Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature

New Journal of Physics, Vol. 11, Iss. 1, 2009-01 ,pp. : 243-258

IOP Publishing

Access to resources Recommend Favorite

Graphene-like quaternary compound SiBCN: A new wide direct band gap semiconductor predicted by a first-principles study

By Qian Yan Wu Haiping Kan Erjun Deng Kaiming

EPL (EUROPHYSICS LETTERS), Vol. 118, Iss. 1, 2017-06 ,pp. : 17002-17002

Edp Sciences

Access to resources Recommend Favorite

Room temperature exciton-photon Rabi splitting in a semiconductor microcavity

Le Journal de Physique IV, Vol. 03, Iss. C5, 1993-10 ,pp. : C5-51-C5-58

Edp Sciences

Access to resources Recommend Favorite