An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

Publisher： IOP Publishing

ISSN： 1367-2630

Source： New Journal of Physics, Vol.10, Iss.5, 2008-05, pp. : 656-665

Access to resources Favorite

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

GaInAs CAMEL DIODES GROWN BY MBE

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-717-C4-720

Edp Sciences

Access to resources Recommend Favorite

Interface dipole formation between GaMnAs and organic material

By  

Journal of Physics: Conference Series , Vol. 193, Iss. 1, 2009-11 ,pp. : 422-425

IOP Publishing

Access to resources Recommend Favorite

The formation of a charge layer at the interface of GaMnAs and an organic material

By  

EPL (EUROPHYSICS LETTERS), Vol. 88, Iss. 4, 2009-11 ,pp. : 46002-46002

Edp Sciences

Access to resources Recommend Favorite

Microstructural characterisation of zinc-blende Ga1-xMnxN grown by MBE as a function of Mn flux

By  

Journal of Physics: Conference Series , Vol. 26, Iss. 1, 2006-02 ,pp. : 179-182

IOP Publishing

Access to resources Recommend Favorite

Atomic structure of MBE-grown GaAs nanowhiskers

By Soshnikov I.   Cirlin G.   Tonkikh A.   Samsonenko Yu.   Dubovskii V.   Ustinov V.   Gorbenko O.   Litvinov D.   Gerthsen D.  

Physics of the Solid State, Vol. 47, Iss. 12, 2005-12 ,pp. : 2213-2218

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite