Atomic displacements and electronic properties for 4 × 1–8 × 2 phase transition of In-adsorbed Si(111) surface

ISSN： 1742-6596

Source： Journal of Physics: Conference Series , Vol.100, Iss.7, 2008-03, pp. : 159-162

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Positron annihilation study of the disordered phase of hydrogen adsorbed on the Ni (111) surface

Journal of Physics: Conference Series , Vol. 262, Iss. 1, 2011-01 ,pp. : 160-163

IOP Publishing

Access to resources Recommend Favorite

Interface effect on structural and electronic properties of graphdiyne adsorbed on SiO2 and h-BN substrates: A first-principles study

By Bao-Juan Dong Teng Yang Ji-Zhang Wang Zhi-Dong Zhang

Chinese Physics B, Vol. 24, Iss. 9, 2015-09 ,pp. : 96806-96811

IOP Publishing

Access to resources Recommend Favorite

Electronic excitations in BeAl₂O₄, Be₂SiO₄, and Be₃Al₂Si₆O₁₈ crystals

By Ivanov V. Pustovarov V. Shlygin E. Korotaev A. Kruzhalov A.

Physics of the Solid State, Vol. 47, Iss. 3, 2005-03 ,pp. : 466-473

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

A Reflection Electron Microscopy Investigation of the Divergence of the Mean CorrelatedDifference of Step Displacements on a Si(111) Vicinal Surface

Journal de Physique I, Vol. 5, Iss. 4, 1995-04 ,pp. : 443-449

Edp Sciences

Access to resources Recommend Favorite

A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC() clean surfaces: significance of the surface Stark effect

New Journal of Physics, Vol. 12, Iss. 4, 2010-04 ,pp. : 348-365

IOP Publishing

Access to resources Recommend Favorite